| PART |
Description |
Maker |
| SML10SIC06SMD |
10 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-276AB
|
SEMELAB LTD
|
| C3D04060A |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC TO-220, 2 PIN
|
Cree, Inc.
|
| SSR24C50CT SSR24C50CTG SSR24C50CTGTX SSR24C50CTGTX |
24 AMP 600 VOLTS SCHOTTKY SILICON CARBIDE CENTER TAP RECTIFIER
|
ETC
|
| SSR24C60CT SSR24C60CTS.5TXV SSR24C50 SSR24C50CTS.5 |
24 AMP 600 VOLTS SCHOTTKY SILICON CARBIDE CENTER TAP RECTIFIER 24放大00伏碳化硅肖特基整流技术咨询中
From old datasheet system
|
Electronic Theatre Controls, Inc.
ETC[ETC]
SSDI[Solid States Devices, Inc]
List of Unclassifed Manufacturers
|
| C3D04060E |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252 TO-252, 3 PIN
|
Cree, Inc.
|
| STPSC1206D STPSC1206 |
600 V power Schottky silicon carbide diode
|
STMicroelectronics
意法半导
|
| SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER
10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| SIDC16D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| P6KE6.8A P6KE7.5A P6KE9.1A P6KE180 P6KE8.2 P6KE43 |
Unidirectional and bidirectional Transient Voltage Suppressor diodes 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
16-Bit Buffers/Drivers with Bus-Hold and 3-State Outputs 48-TSSOP -40 to 85 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
Quadruple 1-of-2 Data Selectors/Multiplexers with 3-State Outputs 16-SOIC -40 to 85 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
|
SEMIKRON
|
|
